Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 7.3 A, 30 V Enhancement, 8-Pin SOIC IRF7389TRPBF

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Subtotal (1 pack of 20 units)*

₩29,120.00

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  • 2026년 11월 02일 부터 배송
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20 - 980₩1,456.00₩29,120.00
1000 - 1980₩1,432.00₩28,640.00
2000 +₩1,404.00₩28,100.00

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포장 옵션
RS 제품 번호:
826-8908
제조사 부품 번호:
IRF7389TRPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

7.3A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

98mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.78V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
PH

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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