Infineon Isolated HEXFET 2 Type N, Type P-Channel MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC IRF7309TRPBF

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₩19,326.40

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20 - 980₩966.32₩19,345.20
1000 - 1980₩943.76₩18,856.40
2000 +₩928.72₩18,555.60

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포장 옵션
RS 제품 번호:
826-8866
제조사 부품 번호:
IRF7309TRPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.4W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.7nC

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

5mm

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Distrelec Product Id

304-44-451

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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