Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF

RS 제품 번호:: 826-8904
제조사 부품 번호:: IRF7380TRPBF
제조업체:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩22,672.80

재고있음

2,460 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
20 - 980	₩1,133.64	₩22,672.80
1000 - 1980	₩1,105.44	₩22,090.00
2000 +	₩1,088.52	₩21,770.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 826-8904
제조사 부품 번호:: IRF7380TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	80V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	15nC
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Length	5mm
	Width	4 mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 80V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 15nC
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Length 5mm
	Width 4 mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7380TRPBF

This MOSFET is designed for efficient power management in various electronic applications. With a high voltage rating and a continuous drain current of 3.6A, it is suitable for high frequency DC-DC converters, ensuring reliable performance. Its Advanced design offers a practical solution for professionals in automation, electronics, and mechanical sectors seeking a versatile component for their circuits.

Features & Benefits

• Industry-standard SO-8 package ensures compatibility across different vendors

• Low Rds(on) of 73mΩ optimises efficiency in power applications

• Enhancement mode operation enhances performance characteristics

• Low gate charge of 15nC facilitates quicker switching speeds

• Maximum drain-source voltage of 80V accommodates high power needs

• RoHS compliant and halogen-free promotes environmental safety

Applications

• Used in high frequency DC-DC converters for power regulation

• Effective in battery management systems that require low power loss

• Suitable for motor controllers needing efficient switching performance

• Employed in power supply units to improve overall efficiency

• Appropriate for driving inductive loads like relays and solenoids

What are the implications of the maximum continuous drain current?

The maximum continuous drain current of 3.6A indicates its capability to manage higher currents in applications such as power supply circuits, ensuring stable operation without overheating.

How does the low Rds(on) affect performance?

The low Rds(on) of 73mΩ reduces power losses during operation, enhancing overall system efficiency, particularly beneficial in high frequency switching applications.

What is the significance of its temperature ratings?

Operating between -55°C and +150°C ensures the component can withstand harsh environmental conditions, making it suitable for industrial applications.

Can this component be directly mounted on PCBs?

Yes, its surface mount design allows for easy integration into PCB layouts, promoting efficient manufacturing processes and ensuring space-saving benefits in Compact designs.

How does the gate threshold voltage influence its operation?

With a gate threshold voltage ranging from 2V to 4V, it provides design flexibility, allowing compatibility with various control signals while ensuring effective device activation.