Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

RS 제품 번호:: 826-8901
제조사 부품 번호:: IRF7342TRPBF
제조업체:: Infineon

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩14,607.60

재고있음

추가로 2025년 12월 29일 부터 30 개 단위 배송
추가로 2026년 1월 05일 부터 1,980 개 단위 배송

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수량	한팩당	한팩당*
10 - 990	₩1,460.76	₩14,607.60
1000 - 1990	₩1,423.16	₩14,231.60
2000 +	₩1,402.48	₩14,024.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 826-8901
제조사 부품 번호:: IRF7342TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.4A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	26nC
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.4A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 26nC
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF

This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.

Features & Benefits

• Maximum continuous drain current of 3.4A

• Drain-source voltage tolerance of up to 55V

• Surface mount design allows for straightforward installations

• Low maximum drain-source resistance improves energy efficiency

• Gate threshold voltage of 1 V promotes dependable switching

Applications

• Power management circuits for improved energy utilisation

• Automation equipment requiring robust switching capabilities

• Suitable for motor control systems

• Used in power converters for electronics

• Common in battery management systems

What are the thermal limits for operation?

It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does this component enhance circuit efficiency?

The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.

Can this MOSFET handle pulsed currents?

Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.

What type of packaging is it available in?

It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.

Is there a specific gate voltage for optimal performance?

The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.