Infineon HEXFET Type P-Channel MOSFET, 10.5 A, 40 V Enhancement, 8-Pin SOIC IRF7240TRPBF

RS 제품 번호:: 826-8835
제조사 부품 번호:: IRF7240TRPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 10.5 A, 40 V Enhancement, 8-Pin SOIC IRF7240TRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩17,032.80

마지막 RS 재고

추가로 2025년 12월 26일 부터 1,920 개 단위 배송
2026년 1월 02일 부터 최종 5,380 개 단위 배송

수량	한팩당	한팩당*
10 - 990	₩1,703.28	₩17,032.80
1000 - 1990	₩1,675.08	₩16,750.80
2000 +	₩1,643.12	₩16,431.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 826-8835
제조사 부품 번호:: IRF7240TRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.5A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	25mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	73nC
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	No
	Height	1.5mm
	Width	4 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.5A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 25mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 73nC
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals No
	Height 1.5mm
	Width 4 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 10.5A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF7240TRPBF

This P-Channel MOSFET excels in power management solutions. With a maximum continuous drain current of 10.5A and a drain-source voltage capability of 40V, it is designed for surface mounting in a Compact SOIC package. Measuring 5mm in length, 4mm in width and 1.5mm in height, it is suitable for various electronic applications including battery management systems.

Features & Benefits

• Supports high current loads up to 10.5A, Ideal for demanding tasks

• Operates effectively in enhancement mode for improved control

• Designed for thermal performance with a customised leadframe

• Suitable for multiple applications, saving on board space

• Compatible with standard soldering processes such as infrared and wave

Applications

• Utilised in battery management systems for monitoring performance

• Used in load management circuits requiring efficient power manipulation

• Suitable for automotive where space and efficiency are critical

• Integrated in power supplies for reliable load handling

What are the key thermal characteristics of this device?

The device features enhanced thermal characteristics due to its customised leadframe design, enabling it to operate comfortably within a junction temperature range of -55°C to +150°C.

How does the on-resistance impact overall performance?

With an exceptionally low Rds(on) of just 25mΩ, this MOSFET significantly reduces power losses during operation, enhancing the efficiency of power circuits and improving heat dissipation.

Can it be used in high-frequency applications?

Yes, the device's parameters, such as the typical gate charge of 73 nC at 10 V, allow for effective operation in high-frequency applications, making it suitable for various electronic devices.

What should be considered for optimal use in circuits?

It's essential to ensure that the gate-source voltage remains within the maximum limits of ±20V to prevent damage, thereby maintaining device reliability and performance in the application.