Infineon HEXFET Type P-Channel MOSFET, 10.5 A, 40 V Enhancement, 8-Pin SOIC

RS 제품 번호:: 168-7928
제조사 부품 번호:: IRF7240TRPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 10.5 A, 40 V Enhancement, 8-Pin SOIC

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 4000 units)*

₩4,248,800.00

일시적 품절

2025년 12월 29일 부터 4,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
4000 - 16000	₩1,062.20	₩4,248,048.00
20000 +	₩1,041.52	₩4,163,072.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 168-7928
제조사 부품 번호:: IRF7240TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	10.5A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	25mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	73nC
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	No
	Width	4 mm
	Height	1.5mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 10.5A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 25mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 73nC
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals No
	Width 4 mm
	Height 1.5mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 10.5A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF7240TRPBF

This P-Channel MOSFET excels in power management solutions. With a maximum continuous drain current of 10.5A and a drain-source voltage capability of 40V, it is designed for surface mounting in a Compact SOIC package. Measuring 5mm in length, 4mm in width and 1.5mm in height, it is suitable for various electronic applications including battery management systems.

Features & Benefits

• Supports high current loads up to 10.5A, Ideal for demanding tasks

• Operates effectively in enhancement mode for improved control

• Designed for thermal performance with a customised leadframe

• Suitable for multiple applications, saving on board space

• Compatible with standard soldering processes such as infrared and wave

Applications

• Utilised in battery management systems for monitoring performance

• Used in load management circuits requiring efficient power manipulation

• Suitable for automotive where space and efficiency are critical

• Integrated in power supplies for reliable load handling

What are the key thermal characteristics of this device?

The device features enhanced thermal characteristics due to its customised leadframe design, enabling it to operate comfortably within a junction temperature range of -55°C to +150°C.

How does the on-resistance impact overall performance?

With an exceptionally low Rds(on) of just 25mΩ, this MOSFET significantly reduces power losses during operation, enhancing the efficiency of power circuits and improving heat dissipation.

Can it be used in high-frequency applications?

Yes, the device's parameters, such as the typical gate charge of 73 nC at 10 V, allow for effective operation in high-frequency applications, making it suitable for various electronic devices.

What should be considered for optimal use in circuits?

It's essential to ensure that the gate-source voltage remains within the maximum limits of ±20V to prevent damage, thereby maintaining device reliability and performance in the application.