제조사부품번호

Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

RS 제품 번호:: 812-3126
제조사 부품 번호:: Si2338DS-T1-GE3
제조업체:: Vishay

Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 pack of 20 units)*

₩13,310.40

마지막 RS 재고

최종적인 7,740 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
20 +	₩665.52	₩13,329.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 812-3126
제조사 부품 번호:: Si2338DS-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	Si2338DS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.033Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	4.2nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Width	1.4 mm
	Height	1.02mm
	Length	3.04mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series Si2338DS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.033Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 4.2nC
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Width 1.4 mm
	Height 1.02mm
	Length 3.04mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

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