onsemi Isolated 2 Type N, Type N, Type P, Type P-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SOT-363 FDG6332C
- RS 제품 번호:
- 761-9847
- 제조사 부품 번호:
- FDG6332C
- 제조업체:
- onsemi
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- RS 제품 번호:
- 761-9847
- 제조사 부품 번호:
- FDG6332C
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N, Type N, Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 700mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.3W | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | -0.77V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N, Type N, Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 700mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.3W | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf -0.77V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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