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Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA

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모두 선택	제품 정보	값
	브랜드	DiodesZetex
	Channel Type	N, P
	Maximum Continuous Drain Current	2.6 A, 4.7 A
	Maximum Drain Source Voltage	60 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	75 mΩ, 125 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.1 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	3.95mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	20.4 nC @ 10 V, 24.2 nC @ 10 V
	Number of Elements per Chip	2
	Length	4.95mm
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	모두 선택
	브랜드 DiodesZetex
	Channel Type N, P
	Maximum Continuous Drain Current 2.6 A, 4.7 A
	Maximum Drain Source Voltage 60 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 75 mΩ, 125 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.1 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Width 3.95mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 20.4 nC @ 10 V, 24.2 nC @ 10 V
	Number of Elements per Chip 2
	Length 4.95mm
	Minimum Operating Temperature -55 °C
	Height 1.5mm

MOSFET Transistors, Diodes Inc.

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