onsemi Isolated 2 Type N-Channel MOSFET, 500 mA, 25 V Enhancement, 6-Pin SOT-363 FDG6303N
- RS 제품 번호:
- 739-0189
- 제조사 부품 번호:
- FDG6303N
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩3,910.40
마지막 RS 재고
- 최종적인 15 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 745 | ₩782.08 | ₩3,910.40 |
| 750 - 1495 | ₩763.28 | ₩3,816.40 |
| 1500 + | ₩748.24 | ₩3,741.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 739-0189
- 제조사 부품 번호:
- FDG6303N
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 770mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 770mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ
- onsemi Isolated 2 Type N, Type N, Type P, Type P-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SOT-363 FDG6332C
- onsemi Isolated 2 Type N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363
- onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
- onsemi Isolated 2 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 6-Pin SOT-563
- onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SOT-23