onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6327C

RS 제품 번호:: 761-3956
제조사 부품 번호:: FDC6327C
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6327C

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩8,102.80

재고있음

3,280 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 740	₩810.28	₩8,102.80
750 - 1490	₩789.60	₩7,896.00
1500 +	₩776.44	₩7,764.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 761-3956
제조사 부품 번호:: FDC6327C
제조업체:: onsemi

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	270mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.25nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	960mW
	Forward Voltage Vf	0.76V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Width	1.7 mm
	Height	1mm
	Length	3mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series PowerTrench
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 270mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.25nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 960mW
	Forward Voltage Vf 0.76V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Width 1.7 mm
	Height 1mm
	Length 3mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6327C

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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