onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N

RS 제품 번호:: 761-3947
제조사 부품 번호:: FDC6305N
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩8,008.80

일시적 품절

2026년 1월 02일 부터 7,430 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 740	₩800.88	₩8,008.80
750 - 1490	₩780.20	₩7,802.00
1500 +	₩767.04	₩7,670.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 761-3947
제조사 부품 번호:: FDC6305N
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	128mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.5nC
	Forward Voltage Vf	0.77V
	Maximum Gate Source Voltage Vgs	8 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	960mW
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Width	1.7 mm
	Length	3mm
	Height	1mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 128mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.5nC
	Forward Voltage Vf 0.77V
	Maximum Gate Source Voltage Vgs 8 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 960mW
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Width 1.7 mm
	Length 3mm
	Height 1mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.

Features and Benefits:

• Low gate charge

• Fast switching speed

• PowerTrench® technology

• Super small footprint. 72% smaller than a SO08.

The FDC6305N is typically used in these applications;

• Load switching

• DC/DC Converters

• Motor Driving

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N

Features and Benefits:

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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