onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

RS 제품 번호:: 671-0340
제조사 부품 번호:: FDC6312P
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩3,835.20

재고있음

14,555 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 745	₩767.04	₩3,835.20
750 - 1495	₩740.72	₩3,703.60
1500 +	₩733.20	₩3,666.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 671-0340
제조사 부품 번호:: FDC6312P
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	115mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	960mW
	Forward Voltage Vf	-0.7V
	Typical Gate Charge Qg @ Vgs	4.4nC
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.7 mm
	Height	1mm
	Length	3mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series PowerTrench
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 115mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 960mW
	Forward Voltage Vf -0.7V
	Typical Gate Charge Qg @ Vgs 4.4nC
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.7 mm
	Height 1mm
	Length 3mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

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