onsemi UniFET N-Channel MOSFET, 52 A, 200 V Enhancement, 3-Pin TO-263 FDB52N20TM
- RS 제품 번호:
- 759-8983
- 제조사 부품 번호:
- FDB52N20TM
- 제조업체:
- onsemi
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대량 구매 할인 받기
200개 더 담고 2% 할인 받기
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩28,420.00
제한된 재고
- 800 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* | 절감 |
|---|---|---|---|
| 5 - 195 | ₩5,684.00 | ₩28,420.00 | - |
| 200 - 395 | ₩5,536.00 | ₩27,680.00 | 2% |
| 400 + | ₩5,456.00 | ₩27,280.00 | 4% |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 759-8983
- 제조사 부품 번호:
- FDB52N20TM
- 제조업체:
- onsemi
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | UniFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 357W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.572mm | |
| Length | 9.98mm | |
| Width | 10.16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series UniFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 357W | ||
Maximum Operating Temperature 150°C | ||
Height 4.572mm | ||
Length 9.98mm | ||
Width 10.16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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