onsemi UniFET Type N-Channel MOSFET, 44 A, 250 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 166-1674
- 제조사 부품 번호:
- FDB44N25TM
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩1,597,248.00
재고있음
- 4,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 3200 | ₩1,996.56 | ₩1,596,496.00 |
| 4000 + | ₩1,955.20 | ₩1,564,611.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-1674
- 제조사 부품 번호:
- FDB44N25TM
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 69mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 307W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Width | 11.33 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 69mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 307W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Width 11.33 mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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