onsemi UniFET N-Channel MOSFET, 52 A, 200 V Enhancement, 3-Pin TO-263 FDB52N20TM
- RS 제품 번호:
- 166-2543
- 제조사 부품 번호:
- FDB52N20TM
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 800 units)*
₩1,913,600.00
공급 부족
공급망의 제한으로 인해 재고가 확보되는 대로 할당됩니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 800 | ₩2,392.00 | ₩1,912,960.00 |
| 1600 - 2400 | ₩2,344.00 | ₩1,874,720.00 |
| 3200 + | ₩2,296.00 | ₩1,837,120.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-2543
- 제조사 부품 번호:
- FDB52N20TM
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | UniFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 357W | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.16mm | |
| Standards/Approvals | No | |
| Height | 4.572mm | |
| Length | 9.98mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series UniFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 357W | ||
Maximum Operating Temperature 150°C | ||
Width 10.16mm | ||
Standards/Approvals No | ||
Height 4.572mm | ||
Length 9.98mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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