onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 166-2437
- 제조사 부품 번호:
- FDB33N25TM
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩1,379,168.00
공급 부족
- 800 개 단위 배송 준비 완료
당사의 현재 재고는 제한중이며, 제조사측에서는 공급 부족을 예상하고 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 800 | ₩1,723.96 | ₩1,379,619.20 |
| 1600 - 2400 | ₩1,690.12 | ₩1,352,096.00 |
| 3200 + | ₩1,656.28 | ₩1,325,024.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-2437
- 제조사 부품 번호:
- FDB33N25TM
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | UniFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 36.8nC | |
| Maximum Power Dissipation Pd | 235W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 11.33 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series UniFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 36.8nC | ||
Maximum Power Dissipation Pd 235W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 11.33 mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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