Infineon SIPMOS N-Channel MOSFET, 2.9 A, 60 V Enhancement, 3-Pin SOT-223 BSP320SH6327XTSA1

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포장 옵션
RS 제품 번호:
753-2810
제조사 부품 번호:
BSP320SH6327XTSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.7nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

950mV

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

3.5mm

Length

6.5mm

Height

1.6mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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