제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 17 A, 150 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 688-6920
제조사 부품 번호:: IRFB4019PBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 17 A, 150 V Enhancement, 3-Pin TO-220

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩12,558.40

재고있음

65 개 단위 배송 준비 완료
추가로 2026년 1월 02일 부터 375 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 10	₩2,511.68	₩12,558.40
15 - 20	₩2,470.32	₩12,351.60
25 +	₩2,421.44	₩12,107.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 688-6920
제조사 부품 번호:: IRFB4019PBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Power Dissipation Pd	80W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.66mm
	Width	4.82 mm
	Height	9.02mm
	Distrelec Product Id	304-43-451
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Power Dissipation Pd 80W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.66mm
	Width 4.82 mm
	Height 9.02mm
	Distrelec Product Id 304-43-451
	Automotive Standard No

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