Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF

RS 제품 번호:: 541-1922
제조사 부품 번호:: IRFB9N60APBF
제조업체:: Vishay

Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩5,540.00

일시적 품절

2026년 9월 14일 부터 3 개 단위 배송
추가로 2026년 10월 02일 부터 1,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 12	₩5,540.00
13 - 24	₩5,400.00
25 +	₩5,260.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 541-1922
제조사 부품 번호:: IRFB9N60APBF
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	9.2A
	Maximum Drain Source Voltage Vds	600V
	Series	IRFB9N60A
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	49nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4.7mm
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 9.2A
	Maximum Drain Source Voltage Vds 600V
	Series IRFB9N60A
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 49nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4.7mm
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Vishay IRFB9N60A Series Power MOSFET, 600V Drain Source Voltage, 9.2A Continuous Drain Current - IRFB9N60APBF

This power MOSFET is a high-voltage N-channel transistor intended for switching and amplification tasks in industrial electronics. It operates as an enhancement-mode device and is supplied in a TO-220AB through-hole package suitable for heat-sink mounting. The component is designed to function across a broad temperature span, making it appropriate for demanding thermal environments.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching
• 9.2A continuous drain current supports moderate load currents
• 750mΩ Rds(on) reduces conduction losses under load
• 170W maximum dissipation permits high-power handling
• 49nC typical gate charge allows controlled switching dynamics
• 30V gate tolerance supports standard gate-drive voltages

Applications

• Suitable for offline power supplies and SMPS
• Ideal for inverter and motor-drive stages
• Used with high-voltage DC-DC converter designs
• Can be used for inductive load switching in industrial equipment
• Used for power-stage prototypes on through-hole development boards

What thermal extremes can the device tolerate in operation?

It is specified to operate from -55°C up to 150°C ambient, accommodating low-temperature starts and elevated thermal stress.

How does the package support mounting and cooling in systems?

The TO-220AB outline permits secure through-hole fixation and direct attachment to a heatsink for improved thermal conduction.

What gate-drive considerations are necessary for switching performance?

Drive voltages should remain within ±30V of gate-to-source

the 49nC gate charge influences required driver current for targeted switching speed.

Is the device suitable for automotive-grade applications?

It is not characterised to automotive standards and therefore is recommended for industrial rather than automotive-certified deployments.