Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220
- RS 제품 번호:
- 919-4769
- 제조사 부품 번호:
- IRFZ44NPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩50,102.00
재고있음
- 600 개 단위 배송 준비 완료
- 추가로 2026년 6월 25일 부터 2,000 개 단위 배송
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수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩1,002.04 | ₩50,102.00 |
| 100 - 150 | ₩987.00 | ₩49,331.20 |
| 200 + | ₩964.44 | ₩48,259.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 919-4769
- 제조사 부품 번호:
- IRFZ44NPBF
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 94W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.4 mm | |
| Height | 8.77mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 94W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.4 mm | ||
Height 8.77mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF
This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.
Features & Benefits
• Utilises enhancement mode for responsive control
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance
Applications
• Suitable for DC-DC converters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters
What impact does the low resistance have on performance?
The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.
How does temperature affect the continuous drain current?
Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.
Can this component handle repetitive avalanche conditions?
Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.
What type of applications benefit most from using this MOSFET?
This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.
Is it compatible with standard PCB designs?
Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.
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