Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF

RS 제품 번호:: 281-6027
Distrelec 제품 번호:: 171-16-205
제조사 부품 번호:: IRF840PBF
제조업체:: Vishay

Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF

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Subtotal (1 tube of 1000 units)*

₩1,277,250.00

일시적 품절

2026년 12월 21일 부터 배송

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수량	한팩당	Per Tube*
1000 - 1000	₩1,277.25	₩1,276,470.00
2000 +	₩1,224.60	₩1,225,380.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 281-6027
Distrelec 제품 번호:: 171-16-205
제조사 부품 번호:: IRF840PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	500V
	Series	IRF840
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	850mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 500V
	Series IRF840
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 850mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

COO (Country of Origin):: CN

Vishay IRF840 Series Power MOSFET, 500V Drain Source Voltage, 8A Continuous Drain Current - IRF840PBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-handling roles in industrial and electronic systems. It operates over a wide ambient range and is supplied in a through-hole TO-220 package for straightforward mounting and heatsinking in control assemblies.

Features and Benefits:

• 500V drain voltage supports high-voltage switching applications
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits

What ambient temperature range can it tolerate in operation?

It operates between -55 °C and 150 °C, allowing use in harsh thermal environments and elevated junction scenarios.

How is it mounted and cooled in a system?

It is supplied in a TO-220AB through-hole package enabling bolted heatsink attachment for efficient thermal management.

What gate drive constraints should designers observe?

Gate drive must remain within ±20V to avoid exceeding the maximum gate-source rating and to preserve device integrity.

How does switching performance relate to gate charge?

The typical 63 nC gate charge gives designers a basis on which to calculate driver current and switching transition times for specified drive voltages.