제조사부품번호

Vishay SIRS N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

RS 제품 번호:: 279-9968
제조사 부품 번호:: SIRS4600DP-T1-RE3
제조업체:: Vishay

Vishay SIRS N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

Subtotal (1 reel of 3000 units)*

₩12,156,000.00

마지막 RS 재고

최종적인 6,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 +	₩4,052.00	₩12,156,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9968
제조사 부품 번호:: SIRS4600DP-T1-RE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	334A
	Maximum Drain Source Voltage Vds	60V
	Series	SIRS
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00115Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	240W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	162nC
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 334A
	Maximum Drain Source Voltage Vds 60V
	Series SIRS
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00115Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 240W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 162nC
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIRS4600DP-T1-RE3

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Reduces switching related power loss

Fully lead (Pb)-free device

Vishay SIRS N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

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