Vishay SiR N channel-Channel MOSFET, 359 A, 60 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4600DP
- RS 제품 번호:
- 735-137
- 제조사 부품 번호:
- SiRS4600DP
- 제조업체:
- Vishay
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩8,722.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩8,722.00 |
| 10 - 49 | ₩5,412.00 |
| 50 - 99 | ₩4,182.00 |
| 100 + | ₩2,818.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-137
- 제조사 부품 번호:
- SiRS4600DP
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 359A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00115Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 60V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2mm | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 359A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiR | ||
Package Type PowerPAK SO-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00115Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 60V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Height 2mm | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Length 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, designed for ultra-low loss switching in AI power server applications and high-current DC/DC converters. It features industry-leading on-resistance of 1.2mΩ maximum at 10V gate drive to maximize efficiency in synchronous rectification topologies.
334A continuous drain current at TC=25°C
Low RDS(on) x Qg figure-of-merit for optimal switching efficiency
100% Rg and UIS tested for reliability
관련된 링크들
- Vishay SiR N channel-Channel MOSFET, 518 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4302DP
- Vishay SiR N channel-Channel MOSFET, 473 A, 40 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4400DP
- Vishay SiR N channel-Channel MOSFET, 241 A, 100 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5100DP
- Vishay SiR N channel-Channel MOSFET, 680 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4300DP
- Vishay SiR N channel-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5800DP
- Vishay SiR Type N-Channel MOSFET, 171 A, 171 V, 8-Pin PowerPAK SO-8 SiRS700DP-T1-GE3
- Vishay SiR N channel-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP
- Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR5102DP