Vishay SIHR Type N-Channel MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR
- RS 제품 번호:
- 279-9928
- 제조사 부품 번호:
- SIHR080N60E-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 3000 units)*
₩17,890,080.00
일시적 품절
- 2026년 5월 15일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩5,963.36 | ₩17,890,080.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 279-9928
- 제조사 부품 번호:
- SIHR080N60E-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | 8x8LR | |
| Series | SIHR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type 8x8LR | ||
Series SIHR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
관련된 링크들
- Vishay SIHR Type N-Channel MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3
- Vishay EF Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3
- Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- Vishay SQJQ184ER Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay SQJQ186ER Type N-Channel MOSFET, 329 A, 30 V Enhancement, 8-Pin PowerPAK (8x8LR)