Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR

RS 제품 번호:: 279-9928
제조사 부품 번호:: SIHR080N60E-T1-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 reel of 3000 units)*

₩21,660,000.00

일시적 품절

2026년 12월 21일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 +	₩7,220.00	₩21,660,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9928
제조사 부품 번호:: SIHR080N60E-T1-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	600V
	Package Type	8x8LR
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 600V
	Package Type 8x8LR
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHR080N60E-T1-GE3

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3

This power MOSFET is a high-voltage switching device designed for demanding industrial electronics and power systems. It operates as an enhancement-mode N-channel transistor tailored for surface-mount installation and delivers robust performance for high-voltage applications while remaining suitable for environments that require compact, board-mounted power components.

Features and Benefits:

• 600V drain capability for high-voltage switching
• 51A continuous current handling for heavy loads
• 0.084Ω low Rds(on) to reduce conduction losses
• 500W power dissipation for thermal headroom
• 63nC typical gate charge for predictable switching behaviour
• 30V gate maximum to accommodate common drive voltages

Applications

• Suitable for industrial motor drive inverter stages
• Ideal for high-voltage power supplies and converters
• Used for DC-DC conversion in automation equipment
• Can be used for switching stages in power management systems
• Used with high-temperature assemblies in harsh environments

What temperature range can the device tolerate during operation?

It is rated to function from -55°C up to 150°C, enabling use in systems exposed to wide thermal variations.

How is the device packaged for PCB assembly?

It is supplied in a surface-mount 8x8LR package with eight pins to support Compact PCB layouts and automated placement.

What gate drive considerations should be observed?

The gate must not exceed ±30V

designers should ensure drive circuits limit Vgs within this threshold to prevent gate damage.

How does switching behaviour impact thermal management?

Typical gate charge of 63nC influences switching losses and therefore affects heat generation during high-frequency operation, informing heatsink or PCB copper requirements.