Vishay E N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

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RS 제품 번호:
279-9928
제조사 부품 번호:
SIHR080N60E-T1-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

600V

Package Type

8x8LR

Series

E

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

500W

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3


This power MOSFET is a high-voltage, N‑channel enhancement device designed for demanding power conversion and switching roles in surface‑mount applications. It offers a combination of high blocking voltage, substantial continuous current capability and a gate voltage rating suitable for common drive circuits, making it appropriate for systems that need compact, high‑power switching in constrained layouts.

Features and Benefits:


• 600V blocking capability enables high‑voltage system use
• 51A continuous current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 500W power dissipation allows sustained high‑power handling
• 63nC typical gate charge enables predictable switching behaviour
• 30V gate rating protects against excessive gate drive voltages

Applications


• Suitable for high‑voltage switch‑mode power supplies
• Ideal for industrial motor drive front‑ends
• Used with renewable energy inverter stages
• Can be used for power‑factor correction circuits
• Appropriate for medium‑power welding and induction heating

What temperature range can it tolerate in harsh environments?


It operates across -55°C to 150°C, permitting use in wide thermal conditions without derating for moderate‑temperature excursions.

How does the package support compact PCB designs?


The 8‑pin surface‑mount 8x8LR footprint enables dense board placement while providing adequate thermal and electrical connectivity.

What is the forward voltage during conduction and its impact?


Typical forward voltage is 1.2V, which influences on‑state voltage drop and must be considered in thermal and efficiency calculations.

Is this device suitable for automotive specification requirements?


It is not specified as automotive‑grade, so it should not be assumed compliant with automotive‑specific standards for vehicle electronics.

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