Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

RS 제품 번호:: 279-9916
제조사 부품 번호:: SIHH155N60EF-T1GE3
제조업체:: Vishay

Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

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₩9,145.50

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2026년 6월 29일 부터 3,000 개 단위 배송

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RS 제품 번호:: 279-9916
제조사 부품 번호:: SIHH155N60EF-T1GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	600V
	Series	SIHH
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.159Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	38nC
	Maximum Power Dissipation Pd	156W
	Maximum Operating Temperature	150°C
	Length	8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 600V
	Series SIHH
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.159Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 38nC
	Maximum Power Dissipation Pd 156W
	Maximum Operating Temperature 150°C
	Length 8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHH155N60EF-T1GE3

Vishay SIHH Series MOSFET, 600V Drain Source Voltage, 18A Continuous Drain Current - SIHH155N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for surface-mount power applications in industrial systems. It operates as an enhancement-mode device for switching and amplification tasks where elevated drain-source voltage capability and moderate current handling are required. The component is supplied in a Compact PowerPAK package suited to dense assemblies and thermal-management considerations.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching
• 18A continuous drain current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation allows high-power operation
• 38nC typical gate charge ensures predictable drive requirements
• 150°C maximum operating temperature tolerates elevated junction loads

Applications

• Suitable for high-voltage motor-drive switching stages
• Ideal for SMPS primary-side switching in industrial supplies
• Used for AC-DC conversion in power-management modules
• Can be used for inductive-load switching in automation equipment

What are the thermal limits when designing heat-sinking?

The device permits a maximum operating temperature of 150°C and a total power dissipation of 156W

thermal layout should account for package thermal resistance and ensure adequate PCB copper or heatsinking to maintain junction temperature within limits.

What gate drive considerations are required for fast switching?

Typical gate charge is 38nC at the specified gate drive

choose a driver capable of delivering the required charge within the desired switching time while respecting the maximum gate-source voltage of 30V.

How does the device behave under low-temperature extremes?

It is specified for operation down to -55°C, so materials and soldering processes must accommodate thermal cycling across that range.

Are there mounting or pin-count considerations for PCB layout?

The component is a surface-mount PowerPAK with four pins

PCB footprint and thermal vias should be designed to match the package for electrical and thermal performance.