Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

RS 제품 번호:: 279-9916
제조사 부품 번호:: SIHH155N60EF-T1GE3
제조업체:: Vishay

Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩10,360.00

3,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 49	₩10,360.00
50 - 99	₩10,140.00
100 - 249	₩10,060.00
250 - 999	₩9,860.00
1000 +	₩9,660.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9916
제조사 부품 번호:: SIHH155N60EF-T1GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK 8 x 8
	Series	SIHH
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.159Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	38nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK 8 x 8
	Series SIHH
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.159Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 38nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH155N60EF-T1GE3

Vishay SIHH Series MOSFET, 600V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIHH155N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching in surface-mount assemblies. It combines a robust voltage rating with substantial continuous current capability and is intended for circuits requiring efficient switching and thermal tolerance across a wide ambient range.

Features and Benefits:

• 600V drain rating enabling high-voltage switching applications
• 18A continuous drain current supporting heavy-load operation
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation assists higher-power handling
• 38nC typical gate charge for controlled switching transitions
• 30V gate-source rating permits standard gate-drive voltages

Applications

• Suitable for industrial motor drive front-ends
• Ideal for high-voltage power converters and inverters
• Used with synchronous rectification and switching stages
• Can be used for high-power LED driver circuits
• Employed in high-voltage test and measurement equipment

What temperature range can it operate within reliably?

It functions across a wide span from -55°C to 150°C, accommodating cold starts and elevated operating temperatures.

What packaging and mounting method does it use for PCB assembly?

It is supplied in a PowerPAK 8x8 surface-mount package designed for low-profile board mounting and efficient thermal contact.

How many pins are available for connection and control?

Four pins are provided to implement drain, source and gate connections in standard MOSFET configurations.

What is the device’s forward voltage characteristic relevant to intrinsic diode conduction?

The built-in diode exhibits a typical forward voltage of 1.2V during conduction events.