제조사부품번호

Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3

RS 제품 번호:: 268-8302
제조사 부품 번호:: SIHH250N60EF-T1GE3
제조업체:: Vishay

Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3

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Subtotal (1 reel of 3000 units)*

₩13,320,000.00

3,000 개 단위 배송 준비 완료

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수량	한팩당	릴당*
3000 +	₩4,440.00	₩13,321,800.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 268-8302
제조사 부품 번호:: SIHH250N60EF-T1GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 8 x 8
	Series	SIHH
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.25Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	89W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	23nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 8 x 8
	Series SIHH
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.25Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 89W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 23nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH250N60EF-T1GE3

COO (Country of Origin):: TW

Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3

This MOSFET is a high-voltage switching device intended for power conversion and control applications where compact surface mounting is required. It operates as an enhancement-mode N-channel transistor and is designed to handle elevated voltages and currents in demanding thermal environments while conforming to RoHS restrictions.

Features and Benefits:

• 650V rating enables high-voltage switching capability
• 13A continuous current supports substantial load drive
• 0.25 Ω Rds(on) reduces conduction losses under load
• 89W power dissipation allows sustained thermal performance
• 23 nC typical gate charge permits moderate-speed gate transitions
• Vgs maximum 30V ensures robust gate-drive margin

Applications

• Suitable for offline switch-mode power supplies
• Ideal for high-voltage motor drive stages
• Used with isolated gate drivers in power converters
• Can be used for resonant and soft-switching topologies
• Suitable for industrial power-management modules

What temperature extremes can it tolerate in operation?

It is specified to operate across a wide temperature span from -55 °C up to 150 °C for use in harsh thermal conditions.

Which package and mounting method are provided for compact assemblies?

It is supplied in a PowerPAK 8x8 package intended for surface-mount placement to save board area and improve thermal conduction.

How does the device’s forward voltage affect body-diode conduction?

The forward voltage of 1.2V indicates the typical voltage drop across the intrinsic diode during reverse conduction, influencing loss calculations in synchronous rectification or freewheeling paths.

What pin configuration is available for circuit integration?

The component exposes four pins, facilitating separate connections for source, drain, gate and tab or thermal-pad arrangements during PCB layout.