Vishay EF Type N-Channel MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3
- RS 제품 번호:
- 239-8632
- 제조사 부품 번호:
- SiHH105N60EF-T1GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩8,460.00
재고있음
- 1,500 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 49 | ₩8,460.00 |
| 50 - 99 | ₩8,309.60 |
| 100 - 249 | ₩8,159.20 |
| 250 - 999 | ₩8,008.80 |
| 1000 + | ₩7,858.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-8632
- 제조사 부품 번호:
- SiHH105N60EF-T1GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.09Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 174W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.09Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 174W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay EF series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
4th generation E series technology
Low effective capacitance
Low switching and conduction losses
관련된 링크들
- Vishay EF Type N-Channel MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8
- Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET, 23 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET, 16 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET, 36 A, 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET, 23 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8