Vishay EF N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3

RS 제품 번호:: 279-9909
제조사 부품 번호:: SIHF085N60EF-GE3
제조업체:: Vishay

Vishay EF N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3

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₩11,420.00

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RS 제품 번호:: 279-9909
제조사 부품 번호:: SIHF085N60EF-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	35W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 35W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.1mm
	Automotive Standard No

Datasheet - SIHF085N60EF-GE3

Vishay Series EF MOSFET, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - SIHF085N60EF-GE3

This MOSFET is a high-voltage N-channel enhancement device intended for power-switching and control stages in through-hole assemblies. It is designed to handle elevated drain-to-source stresses while operating across a wide temperature span, making it suitable for demanding electronic systems that require robust switching and thermal endurance.

Features and Benefits:

• 600V drain capability enabling high-voltage switching applications
• 13A continuous drain current for sustained power delivery
• 0.084Ω low on-resistance reduces conduction losses
• 35W power dissipation supports moderate thermal loading
• 63nC typical gate charge allows predictable switching behaviour
• Vgs rating ±30V for robust gate-drive tolerances

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor-drive switching stages
• Used with power supplies requiring through-hole mounting
• Can be used for switch-mode power supplies in industrial equipment
• Suitable for prototype and repair work on legacy power systems

What mounting style does it require and how does that affect thermal handling?

It uses a TO-220 through-hole package which permits bolting to a heatsink for improved thermal dissipation and straightforward PCB assembly.

What gate-drive considerations are necessary for efficient switching?

Design the driver to supply sufficient charge for the 63nC typical gate charge to achieve desired rise/fall times while avoiding excessive gate stress near the ±30V limit.

How does the device perform across temperature extremes?

It is rated to operate from -55°C up to 150°C, allowing use in environments with significant thermal variation while maintaining electrical characteristics.

What is the forward conduction characteristic relevant to diode conduction paths?

The forward voltage specification is 1.2V, which informs loss calculations when body diode conduction occurs during switching or reverse-current events.