Vishay EF Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3

RS 제품 번호:: 279-9909
제조사 부품 번호:: SIHF085N60EF-GE3
제조업체:: Vishay

Vishay EF Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3

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₩10,237.50

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2026년 6월 29일 부터 1,000 개 단위 배송

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RS 제품 번호:: 279-9909
제조사 부품 번호:: SIHF085N60EF-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	35W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 35W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.1mm
	Automotive Standard No

Datasheet - SIHF085N60EF-GE3

Vishay Series EF MOSFET, 600V Drain-Source Voltage, 13A Continuous Drain Current - SIHF085N60EF-GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching in industrial and electronic systems. It is supplied in a through-hole TO-220 package for straightforward mounting and thermal management, and is intended for use where robust voltage handling and substantial current capability are required.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.084Ω Rds(on) reduces conduction losses under load • 35W power dissipation allows sustained power handling • ±30V gate tolerance permits wide drive voltage margins • 63nC typical gate charge gives predictable switching behaviour

Applications

• Suitable for industrial motor drive switching stages • Ideal for power supplies and high-voltage converters • Used for inverter and UPS power switching modules • Can be used for inductive load control in automation systems

What temperature range can it operate within?

It is rated to operate from -55°C up to a maximum of 150°C, allowing deployment in elevated temperature environments.

How many pins does the component present and what is the mount type?

It has three pins and is configured for through-hole mounting to facilitate secure board attachment and heat-sink interfacing.

What package form and power handling should be expected when fitting a heatsink?

The TO-220 package with 35W maximum power dissipation is suited to heat-sink attachment for improved thermal performance in continuous operation.

Is this device compliant with common environmental restrictions?

It meets RoHS requirements, indicating compliance with specified hazardous substance limits.

How does the gate charge affect switching design?

A typical gate charge of 63nC helps determine driver current requirements and switching transition times for efficient gate-drive design.