Vishay SIHF Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3

RS 제품 번호:: 279-9907
제조사 부품 번호:: SIHF074N65E-GE3
제조업체:: Vishay

Vishay SIHF Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3

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₩13,860.00

994 개 단위 배송 준비 완료

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RS 제품 번호:: 279-9907
제조사 부품 번호:: SIHF074N65E-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	SIHF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.079Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	39W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8nC
	Maximum Operating Temperature	150°C
	Length	10.1mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series SIHF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.079Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 39W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8nC
	Maximum Operating Temperature 150°C
	Length 10.1mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHF074N65E-GE3

Vishay SIHF Series MOSFET, 650V Maximum Drain Source Voltage, 14A Maximum Continuous Drain Current - SIHF074N65E-GE3

This MOSFET is a high-voltage N-channel power transistor designed for through-hole mounting in power-management and switching environments. It operates across an extended temperature range and is intended for applications requiring substantial voltage handling and moderate current capacity while conforming to RoHS restrictions.

Features and Benefits:

• 650V drain rating enables high-voltage switching capabilities
• 14A continuous drain current supports sustained power delivery
• 0.079Ω Rds(on) reduces conduction losses during operation
• 39W power dissipation allows for elevated heat throughput
• 8nC typical gate charge ensures responsive switching behaviour
• 30V gate tolerance permits wide drive voltage margin

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converter topologies
• Can be used for renewable energy power conversion
• Suitable for power factor correction front-end circuits

What thermal extremes can this device tolerate in operation?

It is rated to operate from -55°C up to 150°C allowing use in harsh thermal environments where wide temperature resilience is required.

Which mounting approach is required for installation?

The component utilises a through-hole TO-220 package intended for PCB mounting with a standard heatsinking option for improved thermal management.

How does the gate characteristic affect switching design?

A typical gate charge of 8nC at the specified gate drive level informs gate driver selection to balance switching speed against drive power consumption.

Are there limitations on gate drive voltage to avoid damage?

The device accepts gate-to-source voltages up to 30V, so designs must ensure drive circuits do not exceed this threshold.