Infineon OptiMOS N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin PG-TO252-3 IPD046N08N5ATMA1
- RS 제품 번호:
- 273-2784
- 제조사 부품 번호:
- IPD046N08N5ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩29,280.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩5,856.00 | ₩29,280.00 |
| 50 - 95 | ₩5,332.00 | ₩26,660.00 |
| 100 - 245 | ₩4,872.00 | ₩24,360.00 |
| 250 - 995 | ₩4,508.00 | ₩22,540.00 |
| 1000 + | ₩4,200.00 | ₩21,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2784
- 제조사 부품 번호:
- IPD046N08N5ATMA1
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel 80V MOSFET. It is an ideal for high frequency switching and synchronous rectification. This MOSFET has 175 degree Celsius operating temperature. This MOSFET qualified according to JEDEC1 for target application and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Excellent gate charge
Very low on resistance
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