Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2

RS 제품 번호:: 223-8517
제조사 부품 번호:: IPD50N06S409ATMA2
제조업체:: Infineon

Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 2500 units)*

₩2,285,000.00

추가로 2026년 10월 05일 부터 17,500 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2500 - 2500	₩914.00	₩2,286,500.00
5000 - 5000	₩896.00	₩2,241,000.00
7500 +	₩878.00	₩2,196,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 223-8517
제조사 부품 번호:: IPD50N06S409ATMA2
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	950mV
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	71W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 950mV
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 71W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD50N06S409ATMA2

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S409ATMA2

This MOSFET is a surface-mount N-channel enhancement device designed to control power in electronic systems requiring high current and moderate voltage handling. It operates across a wide temperature range suitable for demanding thermal environments and is intended for use where efficient switching and power management are required.

Features and Benefits:

• Low on-resistance reduces conduction losses during high-current operation
• High continuous drain capability supports sustained 50 A currents
• 60 V drain-source rating enables mid-voltage power stages
• 71 W power dissipation allows handling of elevated thermal loads
• 17 nC typical gate charge enables relatively fast switching transitions
• 20 V gate tolerance accommodates higher gate-drive voltages

Applications

• Suitable for synchronous buck converter switching stages
• Ideal for motor-driver power stages in industrial controllers
• Used with battery-management systems requiring high current handling
• Can be used for DC-DC power conversion in telecoms equipment
• Appropriate for power distribution modules on surface-mounted assemblies

What is the device’s allowable gate-drive range?

The gate may be driven up to 20 V between gate and source without exceeding its gate-voltage limit.

How does the thermal range affect deployment in harsh environments?

It remains operational from −55 °C to 175 °C so it can function in wide-temperature applications where thermal extremes occur.

What packaging and mount method does it use for assembly?

It is supplied in a TO-252 package designed for surface-mount placement on assemblies.

What conduction characteristic indicates efficiency during on-state?

A maximum drain-source resistance of 9 mΩ minimises voltage drop and conduction losses at high currents.

How does forward voltage impact low-voltage power stages?

A forward voltage of 0.95 V limits additional voltage drop across the device during conduction, aiding efficiency.