Vishay SiJA N-Channel MOSFET, 126 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3

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RS 제품 번호:
268-8322
제조사 부품 번호:
SiJA54ADP-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK SO-8L

Series

SiJA

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.0023Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

7nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.13mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It has flexible leads which provide resilience to mechanical stress. It is used an application as synchronous rectification, dc or ac inverters.

Optimizes switching characteristics

ROHS compliant

UIS tested 100 percent

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