Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

RS 제품 번호:: 268-8301
제조사 부품 번호:: SIHH085N60EF-T1GE3
제조업체:: Vishay

Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

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₩12,870.00

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2026년 6월 29일 부터 3,000 개 단위 배송

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1 - 49	₩12,870.00
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RS 제품 번호:: 268-8301
제조사 부품 번호:: SIHH085N60EF-T1GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHH
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.085Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	184W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Series SIHH
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.085Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 184W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH085N60EF-T1GE3

COO (Country of Origin):: TW

Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 30A Drain Current - SIHH085N60EF-T1GE3

This n-channel MOSFET is a high-voltage switching device designed for use in power conversion and control systems within industrial and automation environments. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and efficient switching are required.

Features and Benefits:

• 650V drain rating enabling high-voltage switching capability • 30A continuous drain current supporting sustained load operation • 0.085Ω Rds(on) reducing conduction losses in power paths • 63nC typical gate charge allowing predictable switching performance • 184W power dissipation for high thermal load handling • 150°C maximum junction temperature for elevated temperature use

Applications

• Suitable for industrial motor drive inverters requiring high-voltage devices • Used for power supplies in automation equipment with high switching demands • Ideal for switch-mode converters handling significant power dissipation • Can be used for high-voltage relay replacement in electrical control panels

What mounting style does it require on a board?

It is supplied in a PowerPAK 8x8 surface-mount package requiring compatible solder land patterns for thermal and electrical connection.

How does the gate voltage limit affect control circuitry?

The gate must be driven within ±30V to prevent gate dielectric stress, so gate drivers should provide appropriate voltage margins and protection.

What thermal conditions should be considered during design?

With a 184W dissipation rating and 150°C maximum operating temperature, thermal management such as heat spreading and adequate PCB copper is necessary to maintain safe junction temperatures.

What pin configuration complexity should designers expect?

The device has four pins, which require correct assignment in layout to ensure low-inductance connections for drain, source and gate functions.