Vishay SiHG105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SIHG105N60EF-GE3
- RS 제품 번호:
- 204-7209
- 제조사 부품 번호:
- SIHG105N60EF-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩25,564.50
마지막 RS 재고
- 최종적인 470 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 120 | ₩5,112.90 | ₩25,564.50 |
| 125 - 245 | ₩4,984.20 | ₩24,921.00 |
| 250 + | ₩4,910.10 | ₩24,550.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 204-7209
- 제조사 부품 번호:
- SIHG105N60EF-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | SiHG105N60EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 102mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series SiHG105N60EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 102mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
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