Vishay EF Type N-Channel Power MOSFET, 95 A, 650 V Depletion, 3-Pin TO-247AC SIHG026N60EF-GE3

RS 제품 번호:: 239-8629
제조사 부품 번호:: SIHG026N60EF-GE3
제조업체:: Vishay

Vishay EF Type N-Channel Power MOSFET, 95 A, 650 V Depletion, 3-Pin TO-247AC SIHG026N60EF-GE3

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₩22,425.00

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2026년 6월 29일 부터 495 개 단위 배송

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RS 제품 번호:: 239-8629
제조사 부품 번호:: SIHG026N60EF-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	95A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-247AC
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.023Ω
	Channel Mode	Depletion
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	521W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 95A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-247AC
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.023Ω
	Channel Mode Depletion
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 521W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHG026N60EF-GE3

Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 95A Maximum Continuous Drain Current - SIHG026N60EF-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding power-electronics environments, particularly in automotive and industrial systems. It operates as an N-type depletion-channel device in a through-hole surface package suitable for engineers requiring robust thermal and electrical performance across a wide temperature range.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 95A continuous drain current supports heavy load handling • 0.023Ω Rds(on) reduces conduction losses under load • 521W power dissipation allows sustained thermal performance • 63nC typical gate charge offers predictable switching behaviour • 30V gate tolerance ensures compatibility with common drive voltages

Applications

• Suitable for traction inverter stages in vehicle powertrain electronics • Ideal for high-voltage power supplies and converters • Used for industrial motor drive switching assemblies • Can be used for high-current DC-DC conversion in automation systems

What mounting style does this device use and why does it matter?

It is supplied in a TO-247AC surface-mount package which facilitates secure heat-sinking and straightforward PCB or heatsink attachment for efficient thermal management.

How does the device perform across temperature extremes?

The transistor is rated to operate from -55 to +150°C, enabling use in harsh ambient conditions and high-temperature enclosures.

What gate drive considerations should be observed?

The maximum Vgs is 30V

designers should ensure gate drivers do not exceed this level to prevent gate overstress and ensure reliable switching.

What standard addresses its suitability for automotive use?

It meets the automotive AEC-Q101 standard, indicating it has been qualified for vehicle electronic applications under that specification.