Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩15,453.60

Add to Basket
수량 선택 또는 입력
마지막 RS 재고
  • 최종적인 1,038 개 unit(s)이 배송 준비 됨
수량
한팩당
한팩당*
2 - 8₩7,726.80₩15,453.60
10 - 18₩6,965.40₩13,930.80
20 - 98₩6,833.80₩13,667.60
100 - 498₩5,696.40₩11,392.80
500 +₩5,583.60₩11,167.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
268-8290
제조사 부품 번호:
SIHB080N60E-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SIHB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.08Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

227W

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance

Avalanche energy rated

Low figure of merit

관련된 링크들