Renesas Electronics NP100P06PDG Type P-Channel MOSFET, 100 A, 60 V P, 4-Pin MP-25ZP (TO-263) NP100P06PDG-E1-AY
- RS 제품 번호:
- 264-1238
- 제조사 부품 번호:
- NP100P06PDG-E1-AY
- 제조업체:
- Renesas Electronics
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Subtotal (1 tube of 800 units)*
₩4,283,200.00
일시적 품절
- 2027년 1월 18일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 800 + | ₩5,354.00 | ₩4,283,840.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 264-1238
- 제조사 부품 번호:
- NP100P06PDG-E1-AY
- 제조업체:
- Renesas Electronics
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | MP-25ZP (TO-263) | |
| Series | NP100P06PDG | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 300nC | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type MP-25ZP (TO-263) | ||
Series NP100P06PDG | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 300nC | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Renesas Electronics provides a low voltage power with P-channel type MOS Field Effect Transistor which is designed for high current switching applications. It consist of a 100 A maximum drain current.
Maximum drain source voltage is 60 V
Mounting type is surface mount
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