onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 166-1749
- 제조사 부품 번호:
- FQB27P06TM
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩1,224,256.00
공급 부족
공급망의 제한으로 인해 재고가 확보되는 대로 할당됩니다. 이 제품을 이월 주문할 수 있으며 가능한 한 빨리 배송 날짜를 업데이트해드리겠습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 3200 | ₩1,530.32 | ₩1,223,504.00 |
| 4000 + | ₩1,498.36 | ₩1,198,988.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-1749
- 제조사 부품 번호:
- FQB27P06TM
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | QFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -4V | |
| Maximum Power Dissipation Pd | 3.75W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series QFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -4V | ||
Maximum Power Dissipation Pd 3.75W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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