Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1

RS 제품 번호:: 753-3166
제조사 부품 번호:: SPB80P06PGATMA1
제조업체:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1

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₩8,740.00

12 개 단위 배송 준비 완료
추가로 2026년 9월 01일 부터 30 개 단위 배송

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RS 제품 번호:: 753-3166
제조사 부품 번호:: SPB80P06PGATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	23mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	340W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	115nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	9.45mm
	Length	10.31mm
	Height	4.57mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 23mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 340W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 115nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 9.45mm
	Length 10.31mm
	Height 4.57mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 80A Continuous Drain Current - SPB80P06PGATMA1

This MOSFET is a P‑channel enhancement device designed for high-current switching in automotive and industrial contexts. It operates across a wide temperature span suitable for demanding environments and fits as a surface-mount power transistor in compact assemblies. The device supports heavy continuous drain currents and is intended for applications requiring robust power handling and thermal endurance.

Features and Benefits:

• 80A continuous drain current improves high-load handling
• 60V drain‑source rating permits medium-voltage system use
• 23mΩ low Rds(ON) reduces conduction losses
• 340W maximum power dissipation supports sustained power delivery
• 115nC gate charge enables predictable switching energy management
• Rated for -55°C to175°C operation extends thermal margin

Applications

• Used for half‑bridge and synchronous rectifier stages
• Suitable for automotive power distribution modules
• Ideal for motor drive switching elements
• Can be used for DC‑DC converter output stages
• Used with in-vehicle electronic control units

What package does it come in and how is it mounted?

It is supplied in a TO‑263 package intended for surface mounting to support thermal transfer to the PCB.

What gate voltage limits must be observed during design?

The maximum gate‑source voltage is 20V so gate drive circuits should not exceed this level.

How many pins are available for connection and power routing?

The device provides three pins to accommodate gate, drain and source connections for standard MOSFET layouts.

Is the device specified to automotive stress standards?

It meets the AEC‑Q101 automotive qualification standard for semiconductor devices.