제조사부품번호

Infineon HEXFET N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC

RS 제품 번호:: 262-6739
제조사 부품 번호:: IRF7503TRPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 reel of 4000 units)*

₩1,632,000.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	릴당*
4000 +	₩408.00	₩1,630,400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 262-6739
제조사 부품 번호:: IRF7503TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.4A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance Rds	222mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.25W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	7.8nC
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.4A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance Rds 222mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.25W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 7.8nC
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7503TRPBF

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has smallest footprint which makes it ideal for applications for where printed circuit board space is at premium.

Ultra low resistance

Available in tape and reel

Very small SOIC package

Infineon HEXFET N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC

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