STMicroelectronics Type N-Channel MOSFET, 32 A, 650 V, 3-Pin ACEPACK SMIT
- RS 제품 번호:
- 261-5477
- 제조사 부품 번호:
- SH32N65DM6AG
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 200 units)*
₩6,504,048.00
일시적 품절
- 2026년 12월 29일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 200 - 200 | ₩32,520.24 | ₩6,504,236.00 |
| 400 - 400 | ₩31,869.76 | ₩6,374,140.00 |
| 600 + | ₩31,232.44 | ₩6,246,638.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-5477
- 제조사 부품 번호:
- SH32N65DM6AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ACEPACK SMIT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 97mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ACEPACK SMIT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 97mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The STMicroelectronics automotive grade N channel power MOSFET combination of two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. The DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
Half bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
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