STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 53 A, 650 V Enhancement, 8-Pin ACEPACK SMIT SH63N65DM6AG
- RS 제품 번호:
- 152-113
- 제조사 부품 번호:
- SH63N65DM6AG
- 제조업체:
- STMicroelectronics
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- RS 제품 번호:
- 152-113
- 제조사 부품 번호:
- SH63N65DM6AG
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ACEPACK SMIT | |
| Series | MDmesh DM6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.55V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Power Dissipation Pd | 424W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AQG 324 | |
| Automotive Standard | AEC | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ACEPACK SMIT | ||
Series MDmesh DM6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.55V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Power Dissipation Pd 424W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AQG 324 | ||
Automotive Standard AEC | ||
- COO (Country of Origin):
- CN
The STMicroelectronics device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very Compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
AQG 324 qualified
Half-bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
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