STMicroelectronics STHU65N1 N-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG
- RS 제품 번호:
- 762-553
- 제조사 부품 번호:
- STHU65N110DM9AG
- 제조업체:
- STMicroelectronics
대량 구매 할인 받기
10개 더 담고 ₩3,400.00 할인 받기
View bulk pricing optionsSubtotal (1 unit)*
₩10,900.00
재고있음
- 추가로 2026년 11월 16일 부터 283 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 절감 |
|---|---|---|
| 1 - 9 | ₩10,900.00 | - |
| 10 - 24 | ₩10,560.00 | ₩3,400.00 |
| 25 - 99 | ₩10,340.00 | ₩14,000.00 |
| 100 - 499 | ₩8,840.00 | ₩206,000.00 |
| 500 + | ₩8,300.00 | ₩1,300,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-553
- 제조사 부품 번호:
- STHU65N110DM9AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STHU65N1 | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 14.1mm | |
| Length | 11.9mm | |
| Height | 950μm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STHU65N1 | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Width 14.1mm | ||
Length 11.9mm | ||
Height 950μm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
관련된 링크들
- STMicroelectronics N-Channel STHU65 N-Channel MOSFET, 51 A, 650 V N, 7-Pin HU3PAK STHU65N050DM9AG
- STMicroelectronics STHU36N N-Channel MOSFET, 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- STMicroelectronics STHU47 N-Channel MOSFET, 36 A, 600 V, 7-Pin HU3PAK STHU47N60DM6AG
- STMicroelectronics STH N-Channel MOSFET, 55 A, 30 V Enhancement, 7-Pin HU3PAK STHU32N65DM6AG
- STMicroelectronics N-Channel STHU60 N-Channel MOSFET, 54 A, 600 V Enhancement, 7-Pin HU3PAK STHU60N046DM9AG
- STMicroelectronics STH N-Channel MOSFET, 55 A, 30 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics Sct N-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG