제조사부품번호

Infineon IRF8736 N-Channel MOSFET, 18 A, 30 V Enhancement, 8-Pin SO-8 IRF8736TRPBF

RS 제품 번호:: 258-8204
제조사 부품 번호:: IRF8736TRPBF
제조업체:: Infineon

Infineon IRF8736 N-Channel MOSFET, 18 A, 30 V Enhancement, 8-Pin SO-8 IRF8736TRPBF

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Subtotal (1 pack of 10 units)*

₩12,400.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
10 - 40	₩1,240.00	₩12,400.00
50 - 90	₩1,204.00	₩12,040.00
100 - 490	₩1,130.00	₩11,300.00
500 - 1990	₩1,030.00	₩10,300.00
2000 +	₩906.00	₩9,060.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-8204
제조사 부품 번호:: IRF8736TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	IRF8736
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	17nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series IRF8736
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 17nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Infineon IRF8736 Series MOSFET, 30V Maximum Drain-Source Voltage, 18A Maximum Continuous Drain Current - IRF8736TRPBF

This MOSFET is an N-channel enhancement device intended for low-voltage switching and power management in Compact surface-mount assemblies. It operates across a wide temperature range and is supplied in an SO-8 package for PCB mounting. The part conforms to RoHS directives and is designed for applications that require efficient conduction and controlled gate-drive energy.

Features and Benefits:

• 4.8mΩ Rds(on) for lower conduction losses and improved efficiency
• 17nC typical gate charge for predictable switching speed
• 30V Vds rating for low-voltage power-switching applications
• 18A continuous drain capability for moderate current loads
• 2.5W power dissipation for Compact thermal-budget designs

Applications

• Used for DC power switching in control modules
• Suitable for motor-driver stages with moderate current
• Ideal for high-efficiency power converters in restricted space
• Can be used for load switching on Compact assemblies
• Used with gate drivers requiring up to 20V gate voltage

What gate voltage limits should be observed?

The device must not be driven beyond a 20V gate-to-source differential to avoid gate overstress.

What operating temperatures can it tolerate?

It is specified to operate from -55°C up to 150°C for broad thermal environments.

How should its thermal dissipation be considered on a board?

With 2.5W maximum dissipation, layout should include copper area or thermal vias to manage junction temperature.

Is this component suitable for automotive-rated designs?

It is not classified as an automotive-standard device but complies with RoHS requirements.

What package and mounting style does it use?

The transistor is supplied in an SO-8 package intended for surface mounting on PCB assemblies.