Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN IRFH8303TRPBF
- RS 제품 번호:
- 258-3972
- 제조사 부품 번호:
- IRFH8303TRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩5,279.04
마지막 RS 재고
- 최종적인 3,998 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩2,639.52 | ₩5,280.92 |
| 10 - 98 | ₩2,507.92 | ₩5,017.72 |
| 100 - 248 | ₩2,357.52 | ₩4,716.92 |
| 250 - 498 | ₩2,193.96 | ₩4,387.92 |
| 500 + | ₩2,019.12 | ₩4,036.36 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3972
- 제조사 부품 번호:
- IRFH8303TRPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Standards/Approvals | RoHS | |
| Width | 5 mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Standards/Approvals RoHS | ||
Width 5 mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Softer body-diode compared to previous silicon generation
Wide portfolio available
Increased power density
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