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Infineon HEXFET Type N-Channel MOSFET, 186 A, 150 V Enhancement TO-247 IRF150P221AKMA1

RS 제품 번호:: 258-3957
제조사 부품 번호:: IRF150P221AKMA1
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 186 A, 150 V Enhancement TO-247 IRF150P221AKMA1

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Subtotal (1 unit)*

₩13,460.00

추가로 2026년 10월 26일 부터 32 개 단위 배송

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수량	한팩당
1 - 1	₩13,460.00
2 - 4	₩12,160.00
5 - 9	₩11,760.00
10 - 14	₩11,000.00
15 +	₩10,780.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3957
제조사 부품 번호:: IRF150P221AKMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	186A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	4.50mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 186A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-247
	Mount Type Surface
	Maximum Drain Source Resistance Rds 4.50mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 186A Continuous Drain Current - IRF150P221AKMA1

This MOSFET is a high-current N-channel switching transistor designed for power electronics applications. It operates as an enhancement-mode device with a drain-source voltage rating suitable for medium-voltage circuits. The component tolerates broad thermal extremes, making it applicable in demanding industrial environments where thermal endurance and efficient conduction are required.

Features and Benefits:

• 4.50mΩ Rds(on) delivering reduced conduction losses
• 186A continuous drain current enabling high-current switching
• 150V Vds supporting medium-voltage power stages
• -55°C to +175°C rating allowing wide temperature operation
• 1.2V forward voltage assisting fast-recovery performance

Applications

• Suitable for high-current DC-DC converters and supplies
• Ideal for motor drive inverter output stages
• Used with power rectifier assemblies requiring fast recovery
• Can be used for industrial switching in harsh temperatures
• Suitable for surface-mount power-board implementations

What package format does it use for board mounting?

It is supplied in a TO-247 package designed for surface-mount attachment.

Is this component compliant with modern hazardous-substances regulation?

It carries RoHS approval indicating restriction of specific hazardous substances.

What channel conduction type should designers expect for gate control?

The device operates in enhancement mode as an N-channel transistor requiring positive gate drive to conduct.

What is the specified maximum temperature for continuous operation?

The upper operating limit is +175°C as specified for high-temperature use.

What is the typical forward voltage associated with recovery events?

The forward voltage for conduction and recovery is specified at 1.2V.