Infineon HEXFET Type N-Channel MOSFET, 150 A, 20 V Enhancement, 2-Pin DirectFET
- RS 제품 번호:
- 222-4736
- 제조사 부품 번호:
- IRF6620TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 4800 units)*
₩5,649,024.00
일시적 품절
- 2026년 4월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 4800 - 4800 | ₩1,176.88 | ₩5,649,024.00 |
| 9600 - 9600 | ₩1,154.32 | ₩5,536,224.00 |
| 14400 + | ₩1,129.88 | ₩5,425,228.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4736
- 제조사 부품 번호:
- IRF6620TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 3.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 89W | |
| Standards/Approvals | No | |
| Width | 5.05 mm | |
| Length | 6.35mm | |
| Height | 0.68mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 3.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 89W | ||
Standards/Approvals No | ||
Width 5.05 mm | ||
Length 6.35mm | ||
Height 0.68mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
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