Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247 IRF200P223

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Subtotal (1 pack of 5 units)*

₩37,264.50

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5 - 5₩7,452.90₩37,264.50
10 - 10₩7,265.70₩36,328.50
15 +₩7,152.60₩35,763.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
217-2596
Distrelec 제품 번호:
304-31-968
제조사 부품 번호:
IRF200P223
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55nC

Maximum Power Dissipation Pd

313W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

34.9mm

Length

15.87mm

Automotive Standard

No

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free

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