제조사부품번호

Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247

RS 제품 번호:: 258-3914
제조사 부품 번호:: IPW65R041CFD7XKSA1
제조업체:: Infineon

Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩224,472.00

재고있음

90 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩7,482.40	₩224,455.08
60 - 60	₩7,256.80	₩217,720.92
90 +	₩7,040.60	₩211,201.08

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3914
제조사 부품 번호:: IPW65R041CFD7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	IPW
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	41mΩ
	Maximum Power Dissipation Pd	227W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	102nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series IPW
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 41mΩ
	Maximum Power Dissipation Pd 227W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 102nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPW65R041CFD7XKSA1

The Infineon 650V CoolMOS CFD7 super junction MOSFET TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Ultrafast body diode and very low Qrr

650V breakdown voltage

Significantly reduced switching losses compared to competition

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247

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